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  Datasheet File OCR Text:
 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR
ISSUE 2 - NOV 93
MPSA12P
E B C
TO92
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V CES V EBO IC P tot T j:T stg VALUE 20 10 500 625 -55 to +150 UNIT V V mA mW C
ELECTRICAL CHARACTERISTICS (at Tamb = 25C).
PARAMETER Collector-Emitter Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current SYMBOL V (BR)CES MIN. 20 TYP. MAX. UNIT V CONDITIONS. I C=100A, I B=0* V CE=15V, V BE=0
I CES
100
nA
I CBO
100
nA
VCB=15V, I E=0
Emitter Cut-Off Current I EBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage V CE(sat)
100 1
nA V
V EB=10V, I C=0 I C=10mA, I B=0.01mA
V BE(on)
1.4
V
I C=10mA, V CE=5V*
Static Forward Current h FE Transfer Ratio
20K
I C=10mA, V CE=5V*
*Measured under pulsed conditions. Pulse width =300s. Duty cycle 2%
3-77


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